XP60AN750IN

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XSemi Corporation
XP60AN750IN
MOSFET N-CH 600V 0.053A SOT-23
TO-220-3 Full Pack
XP60AN750IN
Product Attributes
TYPE DESCRIPTION
Series XP60AN750
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2688 pF @ 100 V
FET Feature -
Power Dissipation (Max) 1.92W (Ta), 36.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220CFM
Package / Case TO-220-3 Full Pack
2,392 In Stock
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Unit Price: $3.42
Total Price: $3.42
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