NXPSC12650B6J
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WeEn Semiconductors
NXPSC12650B6J
DIODE SIL CARBIDE 650V 12A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Series | - |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 80 µA @ 650 V |
| Capacitance @ Vr, F | 380pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 175°C (Max) |
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