TP65H150G4LSG

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Transphorm
TP65H150G4LSG
GAN FET N-CH 650V PQFN
2-PowerTSFN
TP65H150G4LSG
Product Attributes
TYPE DESCRIPTION
Series -
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 2-PQFN (8x8)
Package / Case 2-PowerTSFN
3,449 In Stock
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Unit Price: $5.01
Total Price: $5.01
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