TP65H035G4WSQA

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Transphorm
TP65H035G4WSQA
650 V 46.5 GAN FET
TO-247-3
TP65H035G4WSQA
Product Attributes
TYPE DESCRIPTION
Series Automotive, AEC-Q101
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
FET Feature -
Power Dissipation (Max) 187W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
2,692 In Stock
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Unit Price: $20.09
Total Price: $20.09
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