TRS10E65F,S1Q
Active
Toshiba Semiconductor and Storage
TRS10E65F,S1Q
DIODE SIL CARB 650V 10A TO220-2L
TO-220-2
Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Series | - |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr, F | 36pF @ 650V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | 175°C (Max) |
1,871
In Stock
Minimum: 1
Unit Price:
$4.59
Total Price:
$4.59
This price is for reference only, please contact us for now price info@kaian.net.