GCMS040B120S1-E1

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GCMS040B120S1-E1
SIC 1200V 40M MOSFET & 15A SBD S
SOT-227-4, miniBLOC
Product Attributes
TYPE DESCRIPTION
Series -
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3110 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 242W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Package / Case SOT-227-4, miniBLOC
4,749 In Stock
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Unit Price: $34.88
Total Price: $34.88
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