SDS065J006S3

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Sanan Semiconductor
SDS065J006S3
DIODE 650V-6A DFN88
4-PowerVSFN
SDS065J006S3
Product Attributes
TYPE DESCRIPTION
Series -
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 23A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 6 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 18 µA @ 650 V
Capacitance @ Vr, F 310pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case 4-PowerVSFN
Supplier Device Package 4-DFN (8x8)
Operating Temperature - Junction -55°C ~ 175°C
3,024 In Stock
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Worldwide Manufacturers
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