P3D12015T2
Active
PN Junction Semiconductor
P3D12015T2
DIODE SIL CARB 1.2KV 34A TO220-2
TO-220-2
Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Series | P3D |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 34A |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr, F | - |
| Mounting Type | - |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
3,590
In Stock
Minimum: 1
Unit Price:
N/A
Total Price:
N/A
This price is for reference only, please contact us for now price info@kaian.net.