IDL02G65C5XUMA1
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Infineon Technologies
IDL02G65C5XUMA1
DIODE SIL CARBIDE 650V 2A VSON-4
4-PowerTSFN
Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Series | CoolSiC™+ |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 35 µA @ 650 V |
| Capacitance @ Vr, F | 70pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 4-PowerTSFN |
| Supplier Device Package | PG-VSON-4 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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