IDK12G65C5XTMA1
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Infineon Technologies
IDK12G65C5XTMA1
DIODE SIL CARB 650V 12A TO263-2
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Series | CoolSiC™+ |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 12 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 2.1 mA @ 650 V |
| Capacitance @ Vr, F | 360pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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