IDB18E120ATMA1
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Infineon Technologies
IDB18E120ATMA1
DIODE GEN PURP 1.2KV 31A TO263-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Series | - |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 31A |
| Voltage - Forward (Vf) (Max) @ If | 2.15 V @ 18 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 195 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3-2 |
| Operating Temperature - Junction | -55°C ~ 150°C |
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