G4S12020P

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Global Power Technology-GPT
G4S12020P
DIODE SIC 1.2KV 64.5A TO247AC
TO-247-2
G4S12020P
Product Attributes
TYPE DESCRIPTION
Series -
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 64.5A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Capacitance @ Vr, F 2600pF @ 0V, 1MHz
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247AC
Operating Temperature - Junction -55°C ~ 175°C
2,328 In Stock
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