G4S06540PT
Active
Global Power Technology-GPT
G4S06540PT
DIODE SIC 650V 81.8A TO247AC
TO-247-2
Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Series | - |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 81.8A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 40 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr, F | 1860pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
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