G3S12015L
Active
Global Power Technology-GPT
G3S12015L
DIODE SIL CARB 1.2KV 55A TO247AB
TO-247-3
Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Series | - |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 55A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Capacitance @ Vr, F | 1700pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AB |
| Operating Temperature - Junction | -55°C ~ 175°C |
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