G3S12010A
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Global Power Technology-GPT
G3S12010A
DIODE SIC 1.2KV 34.8A TO220AC
TO-220-2
Product Attributes
TYPE | DESCRIPTION |
---|---|
Series | - |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 34.8A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
Capacitance @ Vr, F | 770pF @ 0V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220AC |
Operating Temperature - Junction | -55°C ~ 175°C |
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