Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Mfr | GE Aerospace |
| Series | Automotive, AEC-Q101 |
| Package | Bulk |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |
| Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
| Power - Max | 3.75kW (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
1,403
In Stock
Minimum: 1
Unit Price:
$3043.00
Total Price:
$3043.00
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