GE12047BCA3

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GE Aerospace
GE12047BCA3
1200V 475A SiC Dual Module
Module
GE12047BCA3
Product Attributes
TYPE DESCRIPTION
Series SiC Power
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 475A
Rds On (Max) @ Id, Vgs 4.4mOhm @ 475A, 20V
Vgs(th) (Max) @ Id 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs 1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 29300pF @ 600V
Power - Max 1250W
Operating Temperature -55°C ~ 150°C (Tc)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
3,738 In Stock
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Unit Price: $1077.00
Total Price: $1077.00
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