GPIHV30SB5L

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GaNPower
GPIHV30SB5L
GANFET N-CH 1200V 30A TO263-5L
Die
GPIHV30SB5L
Product Attributes
TYPE DESCRIPTION
Series -
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.4V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 8.25 nC @ 6 V
Vgs (Max) +7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds 236 pF @ 400 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
2,085 In Stock
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Unit Price: $22.00
Total Price: $22.00
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