GPI65010DF56

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GaNPower
GPI65010DF56
GANFET N-CH 650V 10A DFN 5X6
Die
GPI65010DF56
Product Attributes
TYPE DESCRIPTION
Series -
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10A
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.4V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 2.6 nC @ 6 V
Vgs (Max) +7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 400 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
4,852 In Stock
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Unit Price: $5.00
Total Price: $5.00
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