Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Series | eGaN® |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 5 V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1401 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 7-QFN (3x5) |
| Package / Case | 7-PowerWQFN |
1,777
In Stock
Minimum: 1
Unit Price:
$6.25
Total Price:
$6.25
This price is for reference only, please contact us for now price info@kaian.net.