Product Attributes
| TYPE | DESCRIPTION |
|---|---|
| Series | eGaN® |
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V, 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 5V, 0.044nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 30V, 7pF @ 30V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 9-VFBGA |
| Supplier Device Package | 9-BGA (1.35x1.35) |
483
In Stock
Minimum: 1
Unit Price:
$1.74
Total Price:
$1.74
This price is for reference only, please contact us for now price info@kaian.net.