FBG04N30BSH

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EPC Space, LLC
FBG04N30BSH
GAN FET HEMT 40V 30A 4FSMD-B
4-SMD, No Lead
FBG04N30BSH
Product Attributes
TYPE DESCRIPTION
Series e-GaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs 11.4 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 20 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-SMD
Package / Case 4-SMD, No Lead
4,475 In Stock
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Unit Price: $408.31
Total Price: $408.31
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