FBG04N08ASH
Active
EPC Space, LLC
FBG04N08ASH
GAN FET HEMT 40V 8A 4FSMD-A
4-SMD, No Lead
Product Attributes
TYPE | DESCRIPTION |
---|---|
Series | e-GaN® |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 8A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 5 V |
Vgs (Max) | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 312 pF @ 20 V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-SMD |
Package / Case | 4-SMD, No Lead |
4,624
In Stock
Minimum: 1
Unit Price:
$408.31
Total Price:
$408.31
This price is for reference only, please contact us for now price info@kaian.net.