EPC7014UBSH

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EPC Space, LLC
EPC7014UBSH
GAN FET HEMT 60V 1A 4UB
4-SMD, No Lead
EPC7014UBSH
Product Attributes
TYPE DESCRIPTION
Series e-GaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 22 pF @ 30 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-SMD
Package / Case 4-SMD, No Lead
3,676 In Stock
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Unit Price: $265.89
Total Price: $265.89
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