CBR08P65D
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Bruckewell
CBR08P65D
SIC SCHOTTKY DIODE,650V,8A,TO-25
TO-252-3, DPak (2 Leads + Tab), SC-63
Product Attributes
TYPE | DESCRIPTION |
---|---|
Series | Automotive, AEC-Q101 |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 29A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252-2L |
Operating Temperature - Junction | -55°C ~ 175°C |
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