AS1M025120T
Active
ANBON SEMICONDUCTOR (INT'L) LIMITED
AS1M025120T
N-CHANNEL SILICON CARBIDE POWER
TO-247-4
Product Attributes
TYPE | DESCRIPTION |
---|---|
Series | - |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
Vgs(th) (Max) @ Id | 4V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 20 V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 1000 V |
FET Feature | - |
Power Dissipation (Max) | 370W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-4 |
Package / Case | TO-247-4 |
856
In Stock
Minimum: 1
Unit Price:
$39.56
Total Price:
$39.56
This price is for reference only, please contact us for now price info@kaian.net.