AOK033V120X2Q

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Alpha & Omega Semiconductor Inc.
AOK033V120X2Q
1200V SILICON CARBIDE MOSFET
TO-247-3
AOK033V120X2Q
Product Attributes
TYPE DESCRIPTION
Series Automotive, AEC-Q101
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 43mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 2.8V @ 17.5mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 15 V
Vgs (Max) +15V, -5V
Input Capacitance (Ciss) (Max) @ Vds 2908 pF @ 800 V
FET Feature -
Power Dissipation (Max) 300W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
209 In Stock
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Unit Price: $16.35
Total Price: $16.35
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