ALD212908APAL

Active
Advanced Linear Devices Inc.
ALD212908APAL
MOSFET 2N-CH 10.6V 0.08A 8DIP
8-DIP (0.300", 7.62mm)
ALD212908APAL
Product Attributes
TYPE DESCRIPTION
Series EPAD®, Zero Threshold™
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Matched Pair
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 10.6V
Current - Continuous Drain (Id) @ 25°C 80mA
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 500mW
Operating Temperature 0°C ~ 70°C (TJ)
Mounting Type Through Hole
Package / Case 8-DIP (0.300", 7.62mm)
Supplier Device Package 8-PDIP
895 In Stock
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Unit Price: $8.61
Total Price: $8.61
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