ALD110908APAL

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Advanced Linear Devices Inc.
ALD110908APAL
MOSFET 2N-CH 10.6V 8DIP
8-DIP (0.300", 7.62mm)
ALD110908APAL
Product Attributes
TYPE DESCRIPTION
Series EPAD®
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Matched Pair
FET Feature -
Drain to Source Voltage (Vdss) 10.6V
Current - Continuous Drain (Id) @ 25°C 12mA, 3mA
Rds On (Max) @ Id, Vgs 500Ohm @ 4.8V
Vgs(th) (Max) @ Id 810mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V
Power - Max 500mW
Operating Temperature 0°C ~ 70°C (TJ)
Mounting Type Through Hole
Package / Case 8-DIP (0.300", 7.62mm)
Supplier Device Package 8-PDIP
4,066 In Stock
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Unit Price: $7.90
Total Price: $7.90
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